Manufacture method of TFT substrate structure and TFT substrate structure
US9859436B2 · kind B2 · utility
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2References
11Claims
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Assignee
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Key dates
| Filing date | Jun 24, 2015 |
| Grant date | Jan 2, 2018 |
| Priority date | — |
| Expiry date | Feb 13, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/60
Abstract
The present invention provides a manufacture method of a TFT substrate structure and a TFT substrate structure. In the manufacture method of the TFT substrate structure, as manufacturing the gate, a plurality of metal sections distributed in spaces are formed at two sides of the gate, and the gate and the plurality of metal sections are employed to be a mask to implement ion implantation to the polysilicon layer. In the TFT substrate structure according to the present invention, the undoped areas are formed among the n-type heavy doping areas while forming the n-type heavy doping areas at the polysilicon layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.