Thin-film transistor, method of manufacturing the same, and display device
US9859437B2 · kind B2 · utility
37Cited by
2References
9Claims
0Family size
Assignee
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Key dates
| Filing date | Mar 22, 2011 |
| Grant date | Jan 2, 2018 |
| Priority date | — |
| Expiry date | Jun 11, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D99/00
Abstract
A thin film transistor is provided. The thin film transistor includes an oxide semiconductor layer including a source region, a drain region, and a channel region wherein a portion of the source and drain regions has an oxygen concentration less than the channel region. Further provided is a thin film transistor that includes an oxide semiconductor layer including a source region, a drain region, and a channel region, wherein a portion of the source and drain regions includes a dopant selected from the group consisting of aluminum, boron, gallium, indium, titanium, silicon, germanium, tin, lead, and combinations thereof.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.