Optoelectronic semiconductor device

US9859463B2 · kind B2 · utility

Assignee

• OSRAM Opto Semiconductors GmbH · DE

Inventors

• Korbinian Perzlmaier · Regensburg, DE
• Fabian Kopp · Bukit Mertajam, MY
• Christian Eichinger · Wenzenbach, DE
• Björn Muermann · Regensburg, DE

Key dates

• Filing date: May 29, 2015
• Grant date: Jan 2, 2018
• Expiry date: May 29, 2035

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/833

Abstract

An optoelectronic semiconductor device has a semiconductor body including a semiconductor layer sequence with an active region that generates radiation, a semiconductor layer and a further semiconductor layer, wherein the active region is arranged between the semiconductor layer and the further semiconductor layer, a current spreading layer is arranged on a radiation exit face of the semiconductor body, the current spreading layer connects electrically conductively with a contact structure for external electrical contacting of the semiconductor layer, in a plan view of the semiconductor device the current spreading layer adjoins the semiconductor layer in a connection region, and the current spreading layer includes a patterning with a plurality of recesses through which radiation exits the semiconductor device during operation.