Radiation-emitting optoelectronic device

US9859473B2 · kind B2 · utility

Assignee

• OSRAM Opto Semiconductors GmbH · DE

Inventors

• Britta Göötz · Regensburg, DE
• Hubert Halbritter · Dietfurt, DE

Key dates

• Filing date: Jun 23, 2014
• Grant date: Jan 2, 2018
• Expiry date: Jun 23, 2034

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/0361
• WIPO field: Basic materials chemistry
• WIPO sector: Chemistry

Abstract

A radiation-emitting optoelectronic device is provided. The radiation-emitting optoelectronic device includes a semiconductor chip that, when the device is in operation, emits primary radiation of a wavelength of between 600 nm and 1000 nm. A conversion element includes a conversion material comprising ions of one or more metals selected from a group comprising La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Cr, Pb and Mg. The conversion material converts the primary radiation emitted by the semiconductor chip virtually completely into secondary radiation of a wavelength of between 1000 nm and 6000 nm.