Patent · US Active

Formation of carbon nanotube-containing devices

US9859500B2 · kind B2 · utility

1Cited by
12References
16Claims
0Family size

Assignee

Inventors

Key dates

Filing dateFeb 18, 2016
Grant dateJan 2, 2018
Priority date
Expiry dateFeb 18, 2036

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10K2102/00
  • WIPO fieldMaterials, metallurgy
  • WIPO sectorChemistry

Abstract

A method of fabricating a carbon nanotube based device, including forming a trench having a bottom surface and sidewalls on a substrate, selectively depositing a bi-functional compound having two reactive moieties in the trench, wherein a first of the two reactive moieties selectively binds to the bottom surface, converting a second of the two reactive moieties to a diazonium salt; and reacting the diazonium salt with a dispersion of carbon nanotubes to form a carbon nanotube layer bound to the bottom surface of the trench.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.