Methods for producing thin film charge selective transport layers
US9859515B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Mar 7, 2014 |
| Grant date | Jan 2, 2018 |
| Priority date | — |
| Expiry date | Mar 21, 2035 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
Abstract
Methods for producing thin film charge selective transport layers are provided. In one embodiment, a method for forming a thin film charge selective transport layer comprises: providing a precursor solution comprising a metal containing reactive precursor material dissolved into a complexing solvent; depositing the precursor solution onto a surface of a substrate to form a film; and forming a charge selective transport layer on the substrate by annealing the film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.