Image sensor having different substrate bias voltages
US9860467B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 6, 2016 |
| Grant date | Jan 2, 2018 |
| Priority date | — |
| Expiry date | Feb 13, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/8037
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
An image sensor having different bias voltages is provided. The image sensor may include a plurality of pixels configured to output pixel signals based on a received optical signal, and logic circuits configured to output the pixels signals as image data. The pixels may be formed on a first region of a semiconductor substrate, the first region being substrate biased to a first voltage. The logic circuits may be formed on a second region of the semiconductor substrate different from the first region, the second region being substrate biased to a second voltage different from the first voltage. A full-well capacitance (FWC) of the photodiode may be increased by applying the first voltage, which is a negative (−) voltage, to a photodiode of a pixel to reduce (or, alternatively prevent) a blooming effect.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.