Semiconductor sensor having a suspended structure and method of forming a semiconductor sensor having a suspended structure
US9863901B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 20, 2014 |
| Grant date | Jan 9, 2018 |
| Priority date | — |
| Expiry date | Nov 5, 2035 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01N33/0062
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A semiconductor gas sensor device includes a substrate, a conductive layer supported by the substrate, a non-suitable seed layer, and a porous gas sensing layer portion. The non-suitable seed layer is formed from a first material and includes a first support portion supported by the conductive layer, a second support portion supported by the conductive layer, and a suspended seed portion extending from the first support portion to the second support portion and suspended above the conductive layer. The porous gas sensing layer portion is formed from a second material and is supported directly by the non-suitable seed layer in electrical communication with the conductive layer. The first material and the second material form a non-suitable pair of materials.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.