RF impedance matching network
US9865432B1 · kind B1 · utility
Assignee
Inventor
Key dates
| Filing date | Feb 9, 2015 |
| Grant date | Jan 9, 2018 |
| Priority date | — |
| Expiry date | Dec 17, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03H7/40
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An RF impedance matching network includes an RF input configured to operably couple to an RF source, the RF source having a fixed RF source impedance; an RF output configured to operably couple to a plasma chamber, the plasma chamber having a variable plasma impedance; a series EVC; a shunt EVC; an RF input sensor; and a control circuit configured to: determine an input impedance; determine the plasma impedance; determine a first capacitance value for the series variable capacitance and a second capacitance value for the shunt variable capacitance, the determination of the first capacitance value and the second capacitance value based on the plasma impedance and the RF source impedance; generate a control signal to alter at least one of the series variable capacitance and the shunt variable capacitance to the first capacitance value and the second capacitance value, respectively.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.