Plasma generator, annealing device, deposition crystallization apparatus and annealing process
US9865435B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 13, 2015 |
| Grant date | Jan 9, 2018 |
| Priority date | — |
| Expiry date | Nov 13, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05H1/466
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A plasma generator, a plasma annealing device, a deposition crystallization apparatus and a plasma annealing process are disclosed. The plasma generator includes: a gas chamber; a gas intake member configured to introduce a gas into the gas chamber; a cathode and an anode that are configured to apply an electric field to the gas introduced into the gas chamber to ionize the gas into plasma; a cooling water circulation member configured to control a temperature of the plasma generator; and a plasma beam outlet disposed on a top face of the gas chamber. The plasma annealing device including the plasma generator can generate a plasma beam, which can be used in annealing to amorphous silicon and crystallize the amorphous silicon to polycrystalline silicon.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.