Patent · US Active

Sputtering shield

US9865440B1 · kind B1 · utility

1Cited by

6References

24Claims

0Family size

Assignee

Seagate Technology LLC · US

Inventors

Stan Kassela · Singapore, SG
Wei Xu · Tangxia, CN
Lim Boon Leong · Singapore, SG
Liu Hao Jun · Singapore, SG
Chun Wai Joseph Tong · San Jose, US
Weilu Xu · San Jose, US
Thomas Larson Greenberg · Berkeley, US
Antonio Javier Zambano · San Jose, US
Robin DAVIES · Livermore, US

Key dates

Filing date	Nov 29, 2010
Grant date	Jan 9, 2018
Priority date	—
Expiry date	Feb 25, 2033

Classification

Technology area (CPC H)Electricity
CPC primaryH01J37/3405
WIPO fieldElectrical machinery, apparatus, energy
WIPO sectorElectrical engineering

Abstract

A sputtering apparatus includes a sputtering cathode and a target overlying the sputtering cathode. A shield overlies the target and forms an aperture configured to direct sputtering particles onto a substrate. The shield includes a lower shield portion overlying the target, a channel outlet overlying the lower shield portion, and an upper shield portion overlying the channel. In some embodiments the shield includes a first shield and a second shield. The first shield includes a front gas injection outlet. The second shield overlies the first shield and forms the aperture. In various embodiments, the second shield is operable to adjust plasma confinement between the first shield and the second shield.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.