Cleaning method, method of manufacturing semiconductor device, substrate processing apparatus, and recording medium
US9865451B2 · kind B2 · utility
4Cited by
2References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 31, 2014 |
| Grant date | Jan 9, 2018 |
| Priority date | — |
| Expiry date | May 31, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02126
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for cleaning an interior of a process chamber after performing a process of forming a carbon-containing film on a substrate in the process chamber includes performing a cycle a predetermined number of times. The cycle includes supplying a modifying gas into the process chamber to modify deposits including the carbon-containing film deposited on a surface of a member in the process chamber and supplying an etching gas into the process chamber to remove the modified deposits through a thermochemical reaction.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.