Nanocrystal thin film fabrication methods and apparatus
US9865465B2 · kind B2 · utility
1Cited by
4References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 17, 2014 |
| Grant date | Jan 9, 2018 |
| Priority date | — |
| Expiry date | Jan 17, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/86
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Nanocrystal thin film devices and methods for fabricating nanocrystal thin film devices are disclosed. The nanocrystal thin films are diffused with a dopant such as Indium, Potassium, Tin, etc. to reduce surface states. The thin film devices may be exposed to air during a portion of the fabrication. This enables fabrication of nanocrystal-based devices using a wider range of techniques such as photolithography and photolithographic patterning in an air environment.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.