Semiconductor device and method of manufacturing the same
US9865638B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Nov 16, 2016 |
| Grant date | Jan 9, 2018 |
| Priority date | — |
| Expiry date | Nov 16, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2225/06565
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a first semiconductor substrate having a first wiring layer which includes a first conductive pad, a second semiconductor substrate disposed on the first semiconductor substrate and including a second wiring layer which includes a second conductive pad, a first oxide layer disposed on the second semiconductor substrate and containing a second end of an intermediate connection which extends vertically through the second semiconductor substrate and has a first end electrically connected to the second conductive pad, and a third semiconductor substrate disposed on the first oxide layer and including a third wiring layer which includes a third conductive pad. The second end of the intermediate connection layer is electrically connected to the third conductive pad via a metal bond.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.