Semiconductor devices and methods of manufacturing the same
US9865736B2 · kind B2 · utility
4Cited by
6References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 13, 2016 |
| Grant date | Jan 9, 2018 |
| Priority date | — |
| Expiry date | Oct 13, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L23/53295
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a gate structure on a substrate, a source/drain layer on a portion of the substrate adjacent the gate structure, a first contact plug contacting an upper surface of the source/drain layer, and a second contact plug contacting upper surfaces of the gate structure and the first contact plug. A bottom surface of the second contact plug has a first portion not contacting the upper surface of the first contact plug, and the first portion is higher than the upper surface of the gate structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.