Semiconductor light-emitting element
US9865771B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Jan 7, 2015 |
| Grant date | Jan 9, 2018 |
| Priority date | — |
| Expiry date | Jan 7, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/824
Abstract
A semiconductor light-emitting element includes: a lower clad layer 12 that is provided on a substrate 10; an active layer 20 that is provided on the lower clad layer 12 and includes a quantum well layer 24 and a plurality of quantum dots 28 sandwiching a second barrier layer 22b together with the quantum well layer 24; and an upper clad layer 14 that is provided on the active layer 20, wherein a distance D between the quantum well layer 24 and the plurality of quantum dots 28 is smaller than an average of distances X between centers of the plurality of quantum dots 28.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.