Patent · US Active

Semiconductor light-emitting element

US9865771B2 · kind B2 · utility

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4References
18Claims
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Key dates

Filing dateJan 7, 2015
Grant dateJan 9, 2018
Priority date
Expiry dateJan 7, 2035

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10H20/824

Abstract

A semiconductor light-emitting element includes: a lower clad layer 12 that is provided on a substrate 10; an active layer 20 that is provided on the lower clad layer 12 and includes a quantum well layer 24 and a plurality of quantum dots 28 sandwiching a second barrier layer 22b together with the quantum well layer 24; and an upper clad layer 14 that is provided on the active layer 20, wherein a distance D between the quantum well layer 24 and the plurality of quantum dots 28 is smaller than an average of distances X between centers of the plurality of quantum dots 28.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.