Organic thin film transistor, method for manufacturing the same and method for recoverying insulation thereof
US9865830B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 16, 2016 |
| Grant date | Jan 9, 2018 |
| Priority date | — |
| Expiry date | Jun 16, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K2102/103
Abstract
Provided are an organic thin film transistor, a method for manufacturing the same, and a method for recovering insulation thereof. Specifically, the organic thin film transistor includes a substrate, a gate electrode, a semiconductor pattern, a source electrode, a drain electrode and a gate insulation layer. The gate electrode is disposed on the substrate. The semiconductor pattern is electrically insulated with the gate electrode on the substrate. The source electrode and the drain electrode are each electrically connected to the semiconductor pattern on the substrate, and are separated from each other. The gate insulation layer is disposed between the semiconductor pattern and the gate electrode. The gate insulation layer is a sulfur copolymer thin film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.