Composition for etching
US9868902B2 · kind B2 · utility
11Cited by
35References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 10, 2015 |
| Grant date | Jan 16, 2018 |
| Priority date | — |
| Expiry date | Jul 10, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/0415
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The disclosure is related to a composition for etching, a method for manufacturing the composition, and a method for fabricating a semiconductor using the same. The composition may include a first inorganic acid, at least one of silane inorganic acid salts produced by reaction between a second inorganic acid and a silane compound, and a solvent. The second inorganic acid may be at least one selected from the group consisting of a sulfuric acid, a fuming sulfuric acid, a nitric acid, a phosphoric acid, and a combination thereof.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.