Patent · US Active

Doped tin oxide and method for selective metallization of insulating substrate

US9869025B2 · kind B2 · utility

0Cited by

1References

3Claims

0Family size

Assignee

BYD Company Limited · CN

Inventors

Qing Gong · Cary, US
Wei Zhou · Nanhu, CN
Weifeng Miao · Tangxia, CN

Key dates

Filing date	Nov 17, 2015
Grant date	Jan 16, 2018
Priority date	—
Expiry date	Jan 11, 2036

Classification

Technology area (CPC H)Electricity
CPC primaryH05K2203/107
WIPO fieldSurface technology, coating
WIPO sectorChemistry

Abstract

Embodiments of the present disclosure are directed to a doped tin oxide. The doped tin oxide includes a tin oxide and at least one oxide of a doping element. The doping element includes at least one of vanadium and molybdenum. The doped tin oxide includes an amount of the tin oxide ranging from 90 mol % to 99 mol %, and an amount of the at least one oxide ranging from 1 mol % to 10 mol %.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.