Manufacturing method of phthalocyanine crystal by milling crystal transformation for at least 1,000 hours
US9869032B2 · kind B2 · utility
30Cited by
16References
2Claims
0Family size
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Key dates
| Filing date | Nov 28, 2016 |
| Grant date | Jan 16, 2018 |
| Priority date | — |
| Expiry date | Nov 28, 2036 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03G5/0696
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The present invention provides: an electrophotographic photosensitive member which reduces image defects due to ghosting not only under a normal temperature and normal humidity environment but also even under a low temperature and low humidity environment; and a novel phthalocyanine crystal. The electrophotographic photosensitive member of the present invention comprises a photosensitive layer which comprises a phthalocyanine crystal in which a N,N-dimethylformamide is contained. The content of the N,N-dimethylformamide is 0.1% by mass or more and 1.5% by mass or less based on the phthalocyanine crystal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.