Patent · US Active

Scintillator

US9869777B2 · kind B2 · utility

4Cited by
0References
2Claims
0Family size

Assignee

Inventor

Key dates

Filing dateMar 18, 2016
Grant dateJan 16, 2018
Priority date
Expiry dateMar 18, 2036

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG21K4/00
  • WIPO fieldSurface technology, coating
  • WIPO sectorChemistry

Abstract

Provided is a scintillator having a crystal containing CsI (cesium iodide) as a host material thereof and thallium (Tl) and bismuth (Bi), and a novel scintillator which maintains a high output and simultaneously can further enhance the afterglow characteristics. There is proposed a scintillator having a crystal containing CsI (cesium iodide) as a host material thereof and Tl, Bi and O, wherein the concentration a of Bi with respect to Cs in the crystal is 0.001 atomic ppm≦a≦5 atomic ppm; and the ratio (a/b) of the concentration a of Bi with respect to Cs in the crystal to the concentration b of O with respect to I in the crystal is 0.005×10−4 to 200×10−4.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.