Active matrix substrate and method for manufacturing the same
US9869917B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 24, 2015 |
| Grant date | Jan 16, 2018 |
| Priority date | — |
| Expiry date | Jun 24, 2035 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02F2202/103
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An active matrix substrate in a liquid crystal panel of an FFS mode has a data line 24 including an amorphous Si film 122, an n+amorphous Si film 123, a main conductor part 133, and an IZO film 141. The main conductor part 133 and the IZO film 141 are etched at a portion close to the end of a covered region of a photoresist 142, to form the n+amorphous Si film 123 larger than the main conductor part 133 and the IZO film 141. A pattern of a photomask for a source layer is made larger than a pattern of a photomask for a pixel electrode layer, to form the amorphous Si film 122 larger than the n+amorphous Si film 123. The main conductor part 133 is formed of a molybdenum-based material, and in a layer over the data line 24, two-layered protective insulating films are formed such that a compressive stress is generated in one film and a tensile stress is generated in the other film. Accordingly, a high-yield active matrix substrate having a common electrode is provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.