Patent · US Active

Method for collective (wafer-scale) fabrication of electronic devices and electronic device

US9870947B1 · kind B1 · utility

7Cited by
0References
19Claims
0Family size

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Key dates

Filing dateJun 26, 2017
Grant dateJan 16, 2018
Priority date
Expiry dateJun 26, 2037

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10D89/011
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

Electronic devices are manufactured using a collective (wafer-scale) fabrication process. Electronic chips are mounted onto one face of a collective substrate wafer. A collective flexible sheet made of a heat-conductive material comprising a layer containing pyrolytic graphite is fixed to extend over a collective region extending over the electronic chips and over the collective substrate wafer between the electronic chips. The collective flexible sheet is then compressed. A dicing operation is then carried out in order to obtain electronic devices each including an electronic chip, a portion of the collective plate and a portion of the collective flexible sheet.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.