Semiconductor device and an electronic apparatus

US9871031B2 · kind B2 · utility

Assignee

• Semiconductor Manufacturing International (Shanghai) Corporation · CN

Inventors

• Yi-Chang Liu · Milpitas, US
• Jun Wang · Nanjing, CN
• Ying Ma · Shanghai, CN
• Bin Lu · Pittsburgh, US
• Huijuan Cheng · Shanghai, CN

Key dates

• Filing date: Nov 6, 2015
• Grant date: Jan 16, 2018
• Expiry date: Nov 6, 2035

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D89/815

Abstract

A semiconductor device includes a P-type substrate, and an N-well in the P-type substrate. A first N+ diffusion region is located in the P-type substrate, and a first P+ diffusion region is located in the N-well. A second P+ diffusion region is located across a boundary between the P-type substrate and the N-well. A first gate electrode overlies the N-well between the first P+ diffusion regions and the second P+ diffusion region. A second gate electrode overlies the P-type substrate between the second P+ diffusion region and the first N+ diffusion region. The first P+ diffusion region, the N-well, the P-type substrate, and the first N+ diffusion region form an SCR (Silicon-Controlled rectifier) device. The first P+ diffusion region, the second P+ diffusion region, and the first gate electrode form a PMOS transistor. The second P+ diffusion region, the first N+ diffusion region, and the second gate electrode form a gated diode.