Semiconductor light emitting device
US9871060B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 9, 2016 |
| Grant date | Jan 16, 2018 |
| Priority date | — |
| Expiry date | Feb 9, 2036 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02F1/1362
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, a third semiconductor layer. The third semiconductor is provided between the first semiconductor layer and the second semiconductor layer. A first transistor includes a first gate electrode and a first amorphous semiconductor layer. The first gate electrode and the first amorphous semiconductor layer overlap in a first direction. The first direction is from the first semiconductor layer toward the second semiconductor layer. The first gate electrode is provided between the second semiconductor layer and the first amorphous semiconductor layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.