Power MOSFETs and methods for manufacturing the same

US9871134B2 · kind B2 · utility

Assignee

• TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. · TW

Inventors

• Yogendra Yadav · Hsinchu, TW
• Chi-Chih Chen · Baoshan, TW
• Ruey-Hsin Liu · Baoshan, TW
• Chih-Wen Yao · Hsinchu, TW

Key dates

• Filing date: Dec 21, 2015
• Grant date: Jan 16, 2018
• Expiry date: Dec 28, 2035

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/813

Abstract

A semiconductor device and the method of manufacturing the same are provided. The semiconductor device includes a substrate, a source region, a drain region, a filed plate and a gate electrode. The source region is of a first conductivity type located at a first side within the substrate. The drain region is of the first conductive type located at a second side within the substrate opposite to the first side. The field plate is located over the substrate and between the source region and the drain region. A portion of the gate electrode is located over the field plate.