Photodetector

US9871147B2 · kind B2 · utility

Assignees

• SHARP KABUSHIKI KAISHA · JP
• THE UNIVERSITY OF TOKYO · JP

Inventors

• Teruhisa Kotani · Sakai, JP
• Yasuhiko Arakawa · Kawasaki, JP
• Tetsu Tatsuma · Tokyo, JP

Key dates

• Filing date: Nov 16, 2016
• Grant date: Jan 16, 2018
• Expiry date: Nov 16, 2036

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02E10/544

Abstract

A photodetector including a substrate, a light absorption layer arranged over the substrate, the light absorption layer including a stack including a semiconductor layer that absorbs light of a wavelength having an electric field vector parallel to a normal direction of a substrate surface, a lower contact layer arranged on a first side of the light absorption layer, a lower electrode contacting with the lower contact layer, an upper contact layer arranged on a second side of the light absorption layer, and an upper electrode contacting with the upper contact layer. An uneven structure including polarization-selective shapes of projections or depressions on the second side of the upper contact layer is provided, the shapes of projections or depressions each having a size of a wavelength or less of incident light in the semiconductor layer and half the wavelength or greater and being periodically arranged in at least one direction.