Method of growing nitride single crystal and method of manufacturing nitride semiconductor device
US9871162B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 9, 2015 |
| Grant date | Jan 16, 2018 |
| Priority date | — |
| Expiry date | Jan 9, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0262
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of growing a Group-III nitride crystal includes forming a buffer layer on a silicon substrate and growing a Group-III nitride crystal on the buffer layer. The method of growing of a Group-III nitride crystal is executed through metal-organic chemical vapor deposition (MOCVD) during which a Group-III metal source and a nitrogen source gas are provided. The nitrogen source gas includes hydrogen (H2) and at least one of ammonia (NH3) and nitrogen (N2). At least a partial stage of the operation of growing the Group-III nitride crystal can be executed under conditions in which a volume fraction of hydrogen in the nitrogen source gas ranges from 20% to 40% and a temperature of the silicon substrate ranges from 950° C. to 1040° C.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.