Top emitting semiconductor light emitting device
US9871167B2 · kind B2 · utility
8Cited by
6References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 31, 2014 |
| Grant date | Jan 16, 2018 |
| Priority date | — |
| Expiry date | Mar 31, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/882
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Embodiments of the invention include a semiconductor structure including a light emitting layer sandwiched between an n-type region and a p-type region. A growth substrate is attached to the semiconductor structure. The growth substrate has at least one angled sidewall. A reflective layer is disposed on the angled sidewall. A majority of light extracted from the semiconductor structure and the growth substrate is extracted through a first surface of the growth substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.