Method and structure for integrating photonics with CMOs
US9874693B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 10, 2015 |
| Grant date | Jan 23, 2018 |
| Priority date | — |
| Expiry date | Jun 10, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/021
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor structure can include an active device FET region having a FET and a photonics region having a photonic device including a waveguide. A semiconductor structure can include an active device FET region having a FET and a trench isolation region having a photonic device that includes a waveguide. A method can include forming a FET at an active device FET region of a semiconductor structure. A method can include forming a photonic device at a trench isolation region of a semiconductor structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.