Graphene layer formation at low substrate temperature on a metal and carbon based substrate
US9875894B2 · kind B2 · utility
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10Claims
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Key dates
| Filing date | Dec 8, 2014 |
| Grant date | Jan 23, 2018 |
| Priority date | — |
| Expiry date | Dec 8, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02491
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A system and method for forming graphene layers on a substrate. The system and methods include direct growth of graphene on diamond and low temperature growth of graphene using a solid carbon source.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.