Patent · US Active

Method for producing an optoelectronic semiconductor chip

US9876001B2 · kind B2 · utility

1Cited by

6References

17Claims

0Family size

Assignee

OSRAM Opto Semiconductors GmbH · DE

Inventors

Britta Goeoetz · Regensburg, DE
Ion Stoll · Tegernheim, DE
Norwin von Malm · Nittendorf, DE

Key dates

Filing date	Mar 17, 2017
Grant date	Jan 23, 2018
Priority date	—
Expiry date	Mar 17, 2037

Classification

Technology area (CPC H)Electricity
CPC primaryH10H20/0362
WIPO fieldSurface technology, coating
WIPO sectorChemistry

Abstract

A method for producing an optoelectronic semiconductor chip is disclosed. In an embodiment, the method includes providing a semiconductor body with a pixel region including different subpixel regions, each subpixel region having a radiation exit face, applying an electrically conductive layer onto the radiation exit face of a subpixel region, wherein the electrically conductive layer is suitable at least in part for forming a salt with a protic reactant, and depositing a conversion layer on the electrically conductive layer using an electrophoresis process, wherein the deposited conversion layer comprises pores.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.