Semiconductor device and method for manufacturing same
US9876070B2 · kind B2 · utility
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1References
10Claims
0Family size
Assignee
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Key dates
| Filing date | Oct 17, 2013 |
| Grant date | Jan 23, 2018 |
| Priority date | — |
| Expiry date | Oct 17, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/64
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device (100) comprises: a semiconductor substrate (1); a drift region (2) of a first conductivity type having a trench in part of an upper portion thereof and arranged on a first main surface of the semiconductor substrate (100); an electric field reducing region (4) of a second conductivity type arranged, in a bottom portion of the trench, only around a corner portion and not in a center portion; an anode electrode (9) embedded in the trench; and a cathode electrode (10) arranged on a second main surface of the semiconductor substrate (100) which is opposite to the first main surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.