Lift-off of epitaxial layers from silicon carbide or compound semiconductor substrates
US9876081B2 · kind B2 · utility
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6References
38Claims
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Key dates
| Filing date | Jul 15, 2014 |
| Grant date | Jan 23, 2018 |
| Priority date | — |
| Expiry date | Nov 10, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8503
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method to remove epitaxial semiconductor layers from a substrate by growing an epitaxial sacrificial layer on the substrate where the sacrificial layer is a transition metal nitride (TMN) or a TMN ternary compound, growing one or more epitaxial device layers on the sacrificial layer, and separating the device layers from the substrate by etching the sacrificial layer to completely remove the sacrificial layer without damaging or consuming the substrate or any device layer. Also disclosed are the related semiconductor materials made by this method.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.