Semiconductor devices, FinFET devices and methods of forming the same
US9876083B2 · kind B2 · utility
8Cited by
0References
18Claims
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Assignee
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Key dates
| Filing date | Jan 29, 2016 |
| Grant date | Jan 23, 2018 |
| Priority date | — |
| Expiry date | Mar 5, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/017
Abstract
Semiconductor devices, FinFET devices and methods of forming the same are disclosed. One of the semiconductor devices includes a substrate, a gate over the substrate and a gate dielectric layer between the gate and the substrate. The gate dielectric layer includes an oxide-inhibiting layer having a dielectric constant greater than about 8 and being in an amorphous state.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.