Active diode having improved transistor turn-off control method
US9876497B2 · kind B2 · utility
1Cited by
5References
11Claims
0Family size
Assignee
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Key dates
| Filing date | Apr 25, 2014 |
| Grant date | Jan 23, 2018 |
| Priority date | — |
| Expiry date | Oct 3, 2034 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02B70/10
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An active diode having an improved transistor turn-off control method is disclosed. The active diode comprises: a comparator for comparing voltages of both ends of a parasitic diode of a transistor; and a gate driver for controlling a gate terminal of the transistor according to the comparison result of the comparator, and estimates a turn-on time of the transistor and uses the same to control the gate terminal of the transistor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.