Light-emitting device including photoluminescent layer
US9880336B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 21, 2016 |
| Grant date | Jan 30, 2018 |
| Priority date | — |
| Expiry date | Jul 21, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/82
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A light-emitting device includes a photoluminescent layer, a light-transmissive layer located on the photoluminescent layer, and a multilayer mirror layered together with the photoluminescent layer and the light-transmissive layer. At least one of the photoluminescent layer and the light-transmissive layer has a submicron structure. The submicron structure has at least projections or recesses arranged perpendicular to the thickness direction of the photoluminescent layer. The photoluminescent layer emits light including first light having a wavelength λa in air. The distance Dint between adjacent projections or recesses and the refractive index nwav-a of the photoluminescent layer for the first light satisfy λa/nwav-a<Dint<λa. A thickness of the photoluminescent layer, the refractive index nwav-a, and the distance Dint are set to limit a directional angle of the first light emitted from the light emitting surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.