Compound semiconductor photonic integrated circuit with dielectric waveguide
US9880352B2 · kind B2 · utility
34Cited by
28References
21Claims
0Family size
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Key dates
| Filing date | Jul 22, 2016 |
| Grant date | Jan 30, 2018 |
| Priority date | — |
| Expiry date | Jul 22, 2036 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02B2006/12157
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A photonic integrated circuit (PIC) is grown by epitaxy on a substrate. The PIC includes at least one active element, at least one passive element, and a dielectric waveguide. The at least one active and passive elements are formed over the substrate and are in optical contact with each other. The dielectric waveguide is formed over the substrate, and is in optical contact with the at least one active and passive elements. The at least one active and passive elements each are formed using a III-V compound semiconductor material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.