Semiconductor devices including electrically isolated patterns and method of fabricating the same
US9881865B1 · kind B1 · utility
Assignees
Inventors
Key dates
| Filing date | Jul 27, 2016 |
| Grant date | Jan 30, 2018 |
| Priority date | — |
| Expiry date | Jul 27, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/34
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a composite dielectric material can be provided by performing a first deposition cycle to form a first dielectric material and performing a second deposition cycle to form a second dielectric material on the first dielectric material, wherein the first and second dielectric materials comprise different dielectric materials selected from a list consisting of a transition metal nitride, a transition metal oxide, a transition metal carbide, a transition metal silicide, a post-transition metal nitride, a post-transition metal oxide, a post-transition metal carbide, a post-transition metal silicide, a metalloid nitride, a metalloid oxide, and a metalloid carbide.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.