Patent · US Active

Bipolar SCR

US9881913B2 · kind B2 · utility

2Cited by
4References
20Claims
0Family size

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Key dates

Filing dateMar 20, 2017
Grant dateJan 30, 2018
Priority date
Expiry dateMar 20, 2037

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10D62/115

Abstract

A high-voltage bipolar semiconductor controlled rectifier (SCR) includes an emitter region having a first polarity and overlying a base region having a second polarity different from the first polarity; a collector region having the first polarity and lying under the base region; an anode region having the second polarity; a first sinker region having the first polarity and contacting the collector region, wherein the anode region is between the first sinker region and the base region; and a second sinker region having the first polarity and contacting the collector region, the second sinker region lying between the anode region and the base region, wherein an extension of the anode region extends under a portion of the second sinker region.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.