Semiconductor device having asymmetrical source/drain
US9882004B2 · kind B2 · utility
5Cited by
3References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 2, 2017 |
| Grant date | Jan 30, 2018 |
| Priority date | — |
| Expiry date | Feb 2, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/834
Abstract
A semiconductor device includes a substrate, an active fin protruding from the substrate, and an asymmetric diamond-shaped source/drain disposed on an upper surface of the active fin. The source/drain includes a first crystal growth portion and a second crystal growth portion sharing a plane with the first crystal growth portion and having a lower surface disposed at a lower level than a lower surface of the first crystal growth portion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.