Semiconductor device with a tunneling layer having a varying nitrogen concentration, and method of manufacturing the same
US9882018B2 · kind B2 · utility
3Cited by
3References
18Claims
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Key dates
| Filing date | May 15, 2015 |
| Grant date | Jan 30, 2018 |
| Priority date | — |
| Expiry date | Oct 15, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B41/27
Abstract
A semiconductor device includes: a substrate including a channel region; a gate dielectric a tunneling layer, a charge storage layer, and a blocking layer sequentially disposed on the channel region; and a gate electrode disposed on the gate dielectric, wherein the tunneling layer has variations in nitrogen concentrations in a direction perpendicular to the channel region, and has a maximum nitrogen concentration in a position shifted from a center of the tunneling layer toward the charge storage layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.