Ultra high voltage semiconductor device with electrostatic discharge capabilities
US9882046B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 8, 2016 |
| Grant date | Jan 30, 2018 |
| Priority date | — |
| Expiry date | May 19, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D89/811
Abstract
A method includes forming a drain region in a first layer on a semiconductor substrate. The drain region is formed comprising a drain rectangular portion having a first end and a second end, a first drain end portion contiguous with the drain rectangular portion and extending from the first end of the drain rectangular portion away from a center of the drain region, and a second drain end portion contiguous with the drain rectangular portion and extending from the second end of the drain rectangular portion away from the center of the drain region. The method also comprises forming a source region free from contact with and surrounding the drain region in the first layer. The first drain end portion and the second drain end portion are formed having a same doping type and a different doping concentration than the drain rectangular portion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.