Thin film transistor and array substrate, manufacturing methods thereof, and display device
US9882060B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 11, 2015 |
| Grant date | Jan 30, 2018 |
| Priority date | — |
| Expiry date | Aug 11, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D99/00
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Embodiments of the present invention disclose a thin film transistor and an array substrate, manufacturing methods thereof, and a display device, which relate to the field of display technology, and can improve drifting of a threshold voltage of a thin film transistor and enhance the stability and reliability of an array substrate. The thin film transistor comprises an active layer and a gate insulating layer, wherein the material of the active layer is a metal oxide semiconductor, and during forming the thin film transistor, the gate insulating layer conveys oxygen to the active layer so as to reduce an interface state density and a movable impurity concentration of a contact interface between the active layer and the gate insulating layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.