Thin film transistor and manufacturing method thereof, array substrate and display device
US9882063B2 · kind B2 · utility
0Cited by
7References
13Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Aug 10, 2015 |
| Grant date | Jan 30, 2018 |
| Priority date | — |
| Expiry date | Oct 3, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D99/00
Abstract
The present disclosure relates to the field of manufacturing technologies for semiconductor devices and provides a thin film transistor and a manufacturing method thereof, an array substrate and a display device. The thin film transistor includes: an active layer located on a plane; a source electrode, which is located on the active layer and is in contact with the active layer; a first insulation layer located on the source electrode and including a first via hole; and a drain electrode located on the first insulation layer, where the drain electrode is in contact with the active layer via the first via hole.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.