Photodetector structures and manufacturing the same

US9882070B2 · kind B2 · utility

Assignee

• Aalto University · FI

Inventors

• Mikko Juntunen · Kirkkonummi, FI
• Hele Savin · Espoo, FI
• Päivikki Repo · Vantaa, FI
• Ville VÄHÄNISSI · Vantaa, FI
• Antti Haarahiltunen · Perttula, FI

Key dates

• Filing date: Jun 10, 2016
• Grant date: Jan 30, 2018
• Expiry date: Jun 10, 2036

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02E10/547

Abstract

A photodetector structure comprises a semiconductor substrate extending substantially along a horizontal plane and having a bulk refractive index and a front surface defining a front side of the photodetector structure. The front surface comprises high aspect ratio nanostructures forming an optical conversion layer having an effective refractive index gradually changing towards the bulk refractive index to reduce reflection of light incident on the photodetector structure from the front side thereof. Further, the semiconductor substrate comprises an induced junction.