Magnetic memory devices including in-plane current layers
US9882120B2 · kind B2 · utility
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7Claims
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Key dates
| Filing date | Dec 2, 2015 |
| Grant date | Jan 30, 2018 |
| Priority date | — |
| Expiry date | Dec 2, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/01
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A magnetic memory device can include an upper electrode, a lower electrode and a Magnetic Tunnel Junction (MTJ). The MTJ can include a reference magnetic pattern configured to generate a fixed magnetization and a free magnetic pattern on the reference magnetic pattern configured to generate a switchable magnetization that switches direction between parallel and anti-parallel to the fixed magnetization. A metal pattern can be on the free magnetic pattern and can be configured to conduct an in-plane current and a perpendicular-to-plane to/from the upper electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.