Method for designing a lithographic mask
US9885949B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Jul 11, 2016 |
| Grant date | Feb 6, 2018 |
| Priority date | — |
| Expiry date | Aug 12, 2036 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG06F30/398
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The disclosure is directed to a method for designing a lithographic mask to print a pattern of structural features, wherein an OPC-based methodology may be used for producing one or more simulated patterns as they would be printed through the optimized mask. A real mask is then produced according to the optimized design, and an actual print is made through the mask. To evaluate the printed pattern and the PW on wafer more accurately, experimental contours are extracted from the CD-SEM measurements of the printed pattern. The verification of the mask is based on a comparison between on the one hand the contour obtained from the printed pattern, and on the other hand the intended pattern and/or the simulated contour. A direct comparison can be made between simulation and experiment, without losing all the pieces of info contained in each single CD-SEM picture.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.