Patent · US Active

Memory system and method for error correction of memory

US9886340B2 · kind B2 · utility

8Cited by
9References
13Claims
0Family size

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Inventors

Key dates

Filing dateMar 2, 2016
Grant dateFeb 6, 2018
Priority date
Expiry dateMar 2, 2036

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH03M13/19
  • WIPO fieldComputer technology
  • WIPO sectorElectrical engineering

Abstract

A memory system and a method for the error correction of memory are disclosed herein. The method for the error correction of memory is performed by a memory system including a plurality of memory chips. The method for the error correction of memory may include reading, by a first ECC engine unit included in each of a plurality of memory chips, a chunk including a plurality of data bursts, first parity bits, and position bits from each of the plurality of memory chips; extracting, by the first ECC engine unit, a single data burst having an error from the plurality of data bursts using the position bits; and performing, by the first ECC engine unit, first error correction using the first parity bit corresponding to the extracted error data burst.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.