Semiconductor and other materials by thermal neutron transmutation
US9887087B1 · kind B1 · utility
Inventor
Key dates
| Filing date | Jul 8, 2014 |
| Grant date | Feb 6, 2018 |
| Priority date | — |
| Expiry date | Oct 16, 2034 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing p-n junction in semiconductor material such that small dimensions of such junctions are maintained, and associated lattice dislocations of such junctions may be preferentially maintained, and devices with such patterned semiconductor material, is disclosed. Typically, a neutron moderator is used to slow fast neutrons to thermal energies. A mask made from thermal neutron absorbing material, such as cadmium, is placed in close proximity to such neutron moderator. Thermal neutron focusing optics, such as compound refractive lenses, are used to collect and focus thermal neutrons emitted from the mask such that the pattern or portion of the pattern is transferred to the silicon body, with neutrons transmitted from the window areas in the mask and through the neutron optic so as to form the donor dopant concentration for the n-type regions by transmutation of silicon atoms into phosphorus. An electronic device produced by such a method has vertical p-n junctions continuous between both major surfaces and horizontal alternating p-type and n-type regions across most of the face of the material, such that unique properties are achieved.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.